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Suppression of Transient Enhanced Diffusion in Ion Implanted Silicon

Abstract: 

The present invention provides a method for suppressing transient enhanced diffusion of ion implanted dopants in a semiconductor substrate comprising bombarding the substrate in a vacuum with a beam of bubble-forming ions at a first temperature, a first energy, and a first ion dose sufficient to form a dispersion of bubbles at a depth equivalent to a peak of damage distribution in the substrate from implantation of dopant ions into the substrate in a vacuum at a second temperature, a second energy, and a second ion dose, said dispersion being sufficient to reduce said damage distribution.

Patent Number: 
5,759,904
Date Of Issue: 
06/02/1998
Inventors: 

Geoffrey Dearnaley